2
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 33 W CW, 28 Vdc, IDQ
= 800 mA, 960 MHz
Case Temperature 76°C, 120 W CW, 28 Vdc, IDQ
= 800 mA, 960 MHz
RθJC
0.62
0.51
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=70Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 460
μAdc)
VGS(th)
1.4
2.2
2.9
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 800 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 800 mA, Pout
= 33 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
19.0
19.8
22.0
dB
Drain Efficiency
ηD
33.0
34.2
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.3
?
dB
Adjacent Channel Power Ratio
ACPR
?
--37.4
--36.4
dBc
Input Return Loss
IRL
?
-- 2 0
-- 1 2
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 800 mA, Pout
=33WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
20.1
34.6
6.3
--37.2
-- 1 4
940 MHz
20.0
34.3
6.3
--37.3
-- 2 4
960 MHz
19.8
34.2
6.3
--37.4
-- 2 0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
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